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IXFH14N85X - Power MOSFET

Download the IXFH14N85X datasheet PDF. This datasheet also covers the IXFA14N85XHV variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • High Voltage Package.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFA14N85XHV-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFH14N85X N-Channel MOSFET INCHANGE
IXFH14N85XHV N-Channel MOSFET INCHANGE
IXFH14N80 Power MOSFET IXYS Corporation
IXFH14N80P PolarHV HiPerFET Power MOSFET IXYS Corporation
IXFH14N60P Polar MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFH14N100 HiPerFET Power MOSFETs
IXFH140N20X3 Power MOSFET
IXFH100N25P PolarHT HiPerFET Power MOSFET
IXFH100N30X3 N-Channel Power MOSFET
IXFH110N10P PolarHT HiPerFET Power MOSFET

Full PDF Text Transcription

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X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFA14N85XHV IXFP14N85X IXFH14N85X VDSS = ID25 =  RDS(on) 850V 14A 550m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 850 V 850 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 14 35 7 500 50 460 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263HV) 10..65 / 2.2..14.6 Mounting Torque (TO-220 & TO-247) 1.
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