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IXDP20N60BD1 - High Voltage IGBT

IXYS

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Datasheet Details

Part number	IXDP20N60BD1
Manufacturer	IXYS
File Size	757.29 KB
Description	High Voltage IGBT
Datasheet	IXDP20N60BD1-IXYS.pdf

IXDP20N60BD1 Product details

Features

VCES VCGR VGES VGEM T IC25 IC90 ICM U RBSOA TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp =1 ms VGE = ±15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH tSC O (SCSOA) - PC VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 22 Ω, non repetitive TC = 25°C IGBT Diode TJ E Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s S Md Weight Mounting torque 600 600 ±20 ±30 32 20 40 ICM = 60 VCEK < VCES 1.

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Published: Feb 9, 2025 |