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IXDP20N60B - High Voltage IGBT

IXYS Corporation

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Datasheet Details

Part number	IXDP20N60B
Manufacturer	IXYS Corporation
File Size	209.84 KB
Description	High Voltage IGBT
Datasheet	IXDP20N60B_IXYSCorporation.pdf

IXDP20N60B Product details

Features

VCES VCGR VGES TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous 600 V.
NPT IGBT technology 600 V.
low switching losses.
low tail current ±20 V.
no latch up VGEM IC25 Transient TC = 25°C ±30 V.
short circuit capability 32 A.
positive temperature coefﬁcient for easy paralleling IC90 TC = 90°C 20 A.
MOS input, voltage controlled ICM TC = 90°C, tp =1 ms 40 A.
optional ultra fast diode.
International standard package.

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Published: Aug 11, 2008 |