IXDH30N120 Datasheet (IXYS) - High Voltage IGBT

IXDH30N120, High Voltage IGBT

IXDH 30N120 IXDH 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA VCES = 1200 V IC25 = 60 A V = CE(sat) typ 2.4 V C G C G E E IXDH 30N120 IXDH 30N120 D1 TO-247 AD (IXDH) G C E G = Gate, C = Collector , C (TAB) E = Emitter TAB = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Md Weight Symbol V(BR)CES VGE(th) ICES I GES VCE(sat) Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient

IXDH30N120 Features

* NPT IGBT technology

* low saturation voltage

* low switching losses

* square RBSOA, no latch up

* high short circuit capability

* positive temperature coefficient for easy paralleling

* MOS input, voltage controlled

* optional ultra f