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IGBT with optional Diode
High Speed, Low Saturation Voltage
IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE(sat) typ = 2.1 V
C G G
C
TO-247 AD
IXDH ...
E IXDH 35N60 B IXDP 35N60 B
E IXDH 35N60 BD1
G C E
C (TAB)
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg
Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp =1 ms VGE = ±15 V, TJ = 125°C, RG = 10 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 10 W, non repetitive TC = 25°C IGBT Diode
Maximum Ratings 600 600 ±20 ±30 60 35 70 ICM = 110 VCEK < VCES 10 250 80 -55 ... +150 -55 ... +150 300 0.4 - 0.6 0.8 - 1.2 6 V V V V A A A A µs W W °C °C °C Nm Nm g
TO-220 AB
IXDP ...