Datasheet Details
Part number:
IXBH42N300HV, IXBT42N300HV
Manufacturer:
IXYS
File Size:
1.89 MB
Description:
Monolithic bipolar mos transistor.
Note:
This datasheet PDF includes multiple part numbers: IXBH42N300HV, IXBT42N300HV.
Please refer to the document for exact specifications by model.
IXBH42N300HV, IXBT42N300HV, Monolithic Bipolar MOS Transistor
High Voltage, BiMOSFETTM IXBT42N300HV Monolithic Bipolar MOS Transistor IXBH42N300HV Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 25 V ± 35 V IC25 TC = 25°C IC110 TC = 110°C ICM TC = 25°C, 1ms 104 A 42 A 400 A SSOA VGE = 15V, TVJ = 125°C, RG = 20 ICM = 84 A (RBSOA) Clamped Inductive Load 1500 V TSC (SCSOA) PC TJ TJM T stg T L TSOLD Md Weight VGE = 15V, TJ = 12
IXBH42N300HV Features
* High Voltage Package
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage
* FBSOA
* SCSOA Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = 0.8
* VCES, VGE
📁 Related Datasheet
📌 All Tags
