IXBH42N300HV, IXBT42N300HV - Monolithic Bipolar MOS Transistor

Datasheet Details

Part number	IXBH42N300HV, IXBT42N300HV
Manufacturer	IXYS
File Size	1.89 MB
Description	Monolithic Bipolar MOS Transistor
Datasheet	IXBT42N300HV-IXYS.pdf
Note	This datasheet PDF includes multiple part numbers: IXBH42N300HV, IXBT42N300HV. Please refer to the document for exact specifications by model.

High Voltage Package.
High Blocking Voltage.
High Peak Current Capability.
Low Saturation Voltage.
FBSOA.
SCSOA Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = 0.8.
VCES, VGE = 0V Characteristic Values Min. Typ. Max. 3000 V 3.0 5.0 V TJ = 125°C 50 µA 250 µA I GES VCE(sat) V = 0V, V = ± 25V CE GE IC = 42A, VGE = 15V, Note 1 TJ = 125°C ±200 nA 2.5 3.0 V 3.

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Published: Feb 10, 2025 |