CPC5602 Datasheet (IXYS)

CPC5602, N-Channel FET

The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third generation vertical DMOS process.

The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

The

CPC5602 Features

* 350V Drain-to-Source Voltage

* Depletion Mode Device Offers Low RDS(on) at Cold Temperatures

* Low On-resistance: 8 (Typical) @ 25°C

* Low VGS(off) Voltage: -2.0V to -3.6V

* High Input Impedance

* Low Input and Output Leakage

* Small Package