60N20F Datasheet (IXYS)

60N20F, IXFH60N20F

Advance Technical Information HiPerRFTM Power MOSFET F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH60N20F IXFT60N20F VDSS ID25 RDS(on) trr = = ≤ ≤ 200V 60A 38mΩ 200ns TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient

60N20F Features

* z z z z TAB TO-268 G S TAB G = Gate S = Source D = Drain TAB = Drain z z International standard packages Avalanche Rated RF capable MOSFETs Double metal process for low gate resistnace Low package inductance Fast intrinsic diode Advantages z Symbol Test Conditions (TJ = 25°C, unless otherw