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60N05-16 - N-Channel MOSFET

Description

Drain Current ID= 60A@ TC=25℃ Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier High current,high speed switc

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 60N05-16 ·DESCRIPTION ·Drain Current ID= 60A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ·High current,high speed switching ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 60 ID A Drain Current-continuous@ TC=100℃ 42 ID(puls) Pulse Drain Current 240 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.
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