30N50Q Datasheet (IXYS) - Power MOSFETs

30N50Q, Power MOSFETs

HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 30N50Q (Electrically Isolated Back Surface) IXFR 32N50Q N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W Preliminary data Symbol VDSS VDGR VGS VGSM ID25 I DM I AR EAS EAR dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient 500 500 ±20 ±30 TC = 25°C T C = 25°C, Pulse

30N50Q Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* Low drain to tab capacitance(