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30N60A - High speed IGBT

Download the 30N60A datasheet PDF. This datasheet also covers the 30N60 variant, as both devices belong to the same high speed igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • l International standard packages l 2nd generation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (30N60-IXYS.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
30N60 High speed IGBT
30N60C3 IGBT
30N45 N-Channel MOSFET
30N50 N-Channel MOSFET
30N50Q Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions Maximum Ratings VCES V CGR VGES V GEM IC25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C T C = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH P C TJ TJM T stg Md Weight T C = 25°C Mounting torque (M3) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 600 V 600 V ±20 V ±30 V 50 A 30 A 100 A ICM = 60 A @ 0.8 VCES 200 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.13/10 Nm/lb.in.
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