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VMM650-01F - Dual Power HiPerFET Module

Features

  • HiPerFET TM technology.
  • low RDSon.
  • unclamped inductive switching (UIS) capability.
  • dv/dt ruggedness.
  • fast intrinsic reverse diode.
  • low gate charge.
  • thermistor for internal temperature measurement.
  • package.
  • low inductive current path.
  • screw connection to high current main terminals.
  • use of non interchangeable connectors for auxiliary terminals possible.
  • Kelvin source terminals for easy dri.

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Full PDF Text Transcription

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VMM 650-01F www.DataSheet4U.com Dual Power HiPerFETTM Module Phaseleg Configuration VDSS = 100 V ID25 = 680 A RDS(on) = 1.
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