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VMM90-09F - Dual Power HiPerFET Module

Features

  • HiPerFET TM technology.
  • low RDSon.
  • unclamped inductive switching (UIS) capability.
  • dv/dt ruggedness.
  • fast intrinsic reverse diode.
  • low gate charge.
  • thermistor for internal temperature measurement.
  • package.
  • low inductive current path.
  • screw connection to high current main terminals.
  • use of non interchangeable connectors for auxiliary terminals possible.
  • Kelvin source terminals for easy dri.

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Datasheet preview – VMM90-09F

Datasheet Details

Part number VMM90-09F
Manufacturer IXYS Corporation
File Size 130.88 KB
Description Dual Power HiPerFET Module
Datasheet download datasheet VMM90-09F Datasheet
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Full PDF Text Transcription

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VMM 90-09F Dual Power HiPerFETTM Module Phaseleg Configuration VDSS = 900 V ID25 = 85 A RDS(on) = 76 mΩ MOSFET T1 + T2 Symbol VDSS VGS ID25 ID80 IF25 IF80 Conditions TVJ = 25°C to 150°C TC = 25°C TC = 80°C (diode) TC = 25°C (diode) TC = 80°C 3 8 9 1 11 10 2 6 7 NTC Maximum Ratings 900 V ±20 V 85 A 65 A 85 A 65 A Symbol RDSon VGSth I DSS IGSS Qg Qgs Qgd t d(on) tr td(off) tf VF trr RthJC RthJS Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = ID80 V DS = 20 V; ID = 30 mA V DS = 0.8 • V; DSS V GS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 450 V; ID = 50 A 3 1.5 960 225 430 76 mΩ 5V 0.4 mA mA 1 µA nC nC nC VGS= 10 V; VDS = 0.
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