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IXUC160N075 - Trench Power MOSFET

Features

  • z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Trench MOSFET - very fast lsowwitcRhDiSn(ogn) - usable intrinsic reverse diode z Low drain to tab capacitance(.

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📁 Similar Datasheet

Part Number Description Manufacturer
IXUC160N075 N-Channel MOSFET INCHANGE
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXUC100N055 55V Trench Power MOSFET
IXUC120N10 Trench Power MOSFET ISOPLUS220
IXUC200N055 Trench Power MOSFET ISOPLUS220

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 ISOPLUS220TM Electrically Isolated Back Surface VDSS = ID25 = RDS(on) = 75 V 160 A 6.5 mΩ ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS VGS ID25 ID90 IS25 IS90 ID(RMS) EAS PD TJ TJM Tstg TL VISOL FC Weight TJ = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 TC = 25°C; Note 1, 2 TC = 90°C, Note 1, 2 Package lead current limit TC = 25°C TC = 25°C 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force 75 V ±20 V 160 A 130 A 160 A 120 A 50 A tbd mJ 300 W -55 ... +175 °C 175 °C -55 ... +150 °C 300 °C 2500 V~ 11 ... 65 / 2.4 ...
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