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IXTY50N085T, IXTP50N085T Datasheet - IXYS Corporation

IXTP50N085T-IXYSCorporation.pdf

This datasheet PDF includes multiple part numbers: IXTY50N085T, IXTP50N085T. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IXTY50N085T, IXTP50N085T

Manufacturer:

IXYS Corporation

File Size:

165.61 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTY50N085T, IXTP50N085T.
Please refer to the document for exact specifications by model.

IXTY50N085T, IXTP50N085T, Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET IXTP50N085T IXTY50N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 V 50 A 23 mΩ TO-220 (IXTP) GD S D (TAB) Symbol VDSS VDGR VGSM ID25 IL IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Package Current Limit, RMS TO-252 TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt

IXTY50N085T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and O

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