IXTY01N100 Datasheet (IXYS Corporation)

IXTY01N100, Power MOSFET

High Voltage Power MOSFET IXTU01N100 IXTY01N100 VDSS = ID25 =  RDS(on) 1000V 100mA 80 N-Channel Enhancement Mode TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting force TO-251 TO-252 Maximum Ratings 1000 V 1000 V 20 V 3

IXTY01N100 Features

* International Standard Packages

* Fast Switching Times

* Avalanche Rated

* Rds(on) HDMOSTM Process

* Rugged Polysilicon Gate Cell structure Advantages

* High Power Density

* Space Savings Applications

* Level Shifting

* Triggers

* Solid State Relays

* Cu