IXTT96N15P Datasheet - IXYS Corporation

IXTT96N15P N-Channel MOSFET

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 96N15P IXTT 96N15P V DSS ID25 RDS(on) = 150 V = 96 A ≤ 24 mΩ Symbol VDSS VDGR VGSS VGSM I D25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL T SOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient T C = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤150° C, RG = 4.

IXTT96N15P Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 150 V VGS(th) VDS = VGS, I

IXTT96N15P Datasheet (212.13 KB)