IXTL2x220N075T Datasheet (IXYS Corporation)

IXTL2x220N075T, Power MOSFET

Advance Technical Information TrenchMVTM Power MOSFETs Common-Gate Pair N-Channel Enhancement Mode Avalanche Rated IXTL2x220N075T 75 V VDSS = ID25 = 2x120 A RDS(on) ≤ 5.5 m Ω D (Electrically Isolated Back Surface) D RG RG ISOPLUS i5-PakTM (IXTL) S Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C (Combined die total = 240 A) Package Current Limit, RMS (Combined die total = 150 A) TC = 25°C, pulse width

IXTL2x220N075T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off