IXTH7P50 Datasheet (IXYS Corporation)

IXTH7P50, P-Channel MOSFET

VDSS ID25 RDS(on) Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 7P50 IXTH 8P50 -500V -7 A 1.5 Ω -500V -8 A 1.2 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C 7P50 8P50 7P50 8P50 7P50 8P50 Maximum Ratings -500 -500 ± 20 ± 30 -7 -8 -28 -32 -7 -8 30 180 -55 +150 150 -55 +150 V V

IXTH7P50 Features

* International standard package

* Low R HDMOS process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) TM DS (on) JEDEC TO-247 AD Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/1