IXTA2N80, IXTP2N80 High Voltage MOSFET

IXYS Corporation

Description

Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 2N80 IXTP 2N80 VDSS ID25 RDS(on) = 800 V.

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IXTA2N80 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXTA2N80, IXTP2N80. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXTA2N80, IXTP2N80
Manufacturer: IXYS Corporation
File Size: 49.66 KB
Datasheet: IXTP2N80_IXYSCorporation.pdf
Description: High Voltage MOSFET
Note: This datasheet PDF includes multiple part numbers: IXTA2N80, IXTP2N80.
Please refer to the document for exact specifications by model.

Features

* Maximum lead temperature for soldering International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless

Applications

* VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Switch-mode and resonant-mode power supplies Flyback inverters DC choppers Advantages VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Space savi

IXTA2N80 Distributors

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IXTP2N80 High Voltage MOSFET IXYS Corporation

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