IXTA200N075T7 - Power MOSFET

IXYS Corporation

Datasheet Details

W Ultra-low On Resistance °C °C °C Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect °C 175 ° C Operating Temperature °C Advantages g Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150° C RDS(on) VGS = 10 V, ID = 25 A, Note 1 Characteristic Values Min.

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Published: Feb 13, 2015 |