IXSN80N60BD1 - High Current IGBT

IXYS Corporation

Datasheet Details

Part number	IXSN80N60BD1
Manufacturer	IXYS Corporation
File Size	627.37 KB
Description	High Current IGBT
Datasheet	IXSN80N60BD1_IXYSCorporation.pdf

International standard package z Aluminium-nitride isolation - high power dissipation z Isolation voltage 3000 V~ z UL registered E 153432 z Low VCE(sat) - for minimum on-state conduction losses z Fast Recovery Epitaxial Diode - short trr and IRM z Low collector-to-case capacitance (< 60 pF) - reduced RFI z Low package inductance (< 10 nH) - easy to drive and to protect z B V CES V GE(th) I CES I GES VCE(sat) IC IC = 500 µA, VGE = 0 V = 8 mA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±.

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Published: Aug 19, 2008 |