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IXSN35N120AU1 - High Voltage 1 GBT with Diode

IXYS

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Datasheet Details

Part number	IXSN35N120AU1
Manufacturer	IXYS
File Size	99.20 KB
Description	High Voltage 1 GBT with Diode
Datasheet	IXSN35N120AU1_IXYS.pdf

IXSN35N120AU1 Product details

Features

q q q q q q Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g q International standard package miniBLOC (ISOTOP) compatible Aluminium-nitride isolation - high power dissipation Isolation voltage 3000 V~ Low VCE(sat) - for minimum on-state conduction losses Fast Recovery Epitaxial Diode - short trr and IRM Low collector-to-case capacitance (< 50 pF) - reducesd RFI Low package inductance (< 10 nH) - easy to drive and to protect Test Conditions Characte.

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Published: Jun 12, 2005 |