IXGT30N60BD1 Datasheet (IXYS Corporation) - HiPerFASTTM IGBT with Diode

IXGT30N60BD1, HiPerFASTTM IGBT with Diode

HiPerFASTTM IGBT with Diode IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25 VCE(sat) tfi(typ) = 600 V = 60 A = 1.8 V = 100 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 60 30 120 ICM = 60 @ 0.8 VCES 200 -55 +150 150 -55 +150 300 1.13/10 T

IXGT30N60BD1 Features

* C = Collector, TAB = Collector Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD

* International standard package

* Moderate frequency IGBT and antiparallel FRED in one package

* High current handling