The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Advanced Technical Information
HiPerFASTTM IGBT with Diode
IXGA 7N60BD1 IXGP 7N60BD1
VCES IC25 VCE(sat) tfi
= 600 V = 14 A = 2.0 V = 150ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 18 Ω Clamped inductive load @ 0.8 VCES TC = 25°C
Maximum Ratings 600 600 ±20 ±30 14 7 56 ICM = 14 80 -55 ... +150 150 -55 ... +150 300 M3 M3.5 V V V V A A A A
G E C (TAB)
G C E
TO-220AB (IXGP)
TO-263 AA (IXGA)
W °C °C °C °C Features G = Gate, E = Emitter, C = Collector, TAB = Collector
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md
www.DataSheet4U.net
• International standard packages
0.