IXGH72N60C3 Datasheet - IXYS Corporation

IXGH72N60C3 GenX3 600V IGBT

www.DataSheet.co.kr GenX3TM 600V IGBT IXGH72N60C3 High-Speed PT IGBT for 40-100kHz Switching VCES IC110 VCE(sat) tfi (typ) = = ≤ = 600V 72A 2.5V 55ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C (Chip Capability) TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C M.

IXGH72N60C3 Features

* z z z z Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque 300 260 1.13/10 6 Optimized for Low Switching Losses Square RBSOA Avalanche Rated International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Symbol Test Condition

IXGH72N60C3 Datasheet (224.34 KB)