IXGH100N30C3 Datasheet (IXYS) - High Speed PT IGBT

IXGH100N30C3, High Speed PT IGBT

Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 High Speed PT IGBTs for 50-150kHz switching V= CES IC110 = V ≤ CE(sat) t = fi typ 300V 100A 1.85V 94ns Symbol VCES VCGR VGES VGEM IC25 I C110 ICM IA E AS SSOA (RBSOA) PC T J TJM T stg TL T SOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (limited by leads) T C = 110°C (chip capability) TC = 25°C, 1ms TC = 25°C T C = 25°C VGE= 15V, TVJ = 125°C, RG = 2Ω

IXGH100N30C3 Features

* z High Frequency IGBT z Square RBSOA z High avalanche capability z Drive simplicity with MOS Gate Turn-On z High current handling capability Applications z PFC Circuits z PDP Systems z Switched-mode and resonant-mode converters and inverters z SMPS z AC motor speed control z DC servo and robot drive