IXGH12N90C Datasheet (IXYS Corporation) - HiPerFAST IGBT Lightspeed Series

IXGH12N90C, HiPerFAST IGBT Lightspeed Series

www.DataSheet4U.com Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C VCES = 900 V = 24 A IC25 VCES(sat) = 3.0 V tfi(typ) = 70 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load, L = 300 mH TC = 25°C Maximum Ratings 900 900 ±20 ±30 24 12 48 ICM = 24 @ 0.8

IXGH12N90C Features

* Very high frequency IGBT

* New generation HDMOSTM process

* International standard package JEDEC TO-247

* High peak current handling capability Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight Applications Symbol Test Conditions