IXFZ520N075T2 - TrenchT2 GigaMOS HiperFET Power MOSFET

IXYS Corporation

Datasheet Details

Part number	IXFZ520N075T2
Manufacturer	IXYS Corporation
File Size	219.98 KB
Description	TrenchT2 GigaMOS HiperFET Power MOSFET
Datasheet	IXFZ520N075T2_IXYSCorporation.pdf

z 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 2500 3000 300 260 2500 20..120 / 4.5..27 3 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z 175°C Operating Temperature z Very High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Very L.

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Published: May 23, 2011 |