IXFR80N20Q Datasheet - IXYS Corporation

IXFR80N20Q HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse widt.

IXFR80N20Q Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* Low drain to tab capacitance(

IXFR80N20Q Datasheet (57.29 KB)

IXFR80N20Q Datasheet Preview — Preview of IXFR80N20Q PDF

Datasheet Details

Part number:

IXFR80N20Q

Manufacturer:

IXYS Corporation

File Size:

57.29 KB

Description:

Hiperfet power mosfets.

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