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IXFR21N100Q - HiPerFETTM Power MOSFETs

IXYS Corporation

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Datasheet Details

Part number	IXFR21N100Q
Manufacturer	IXYS Corporation
File Size	67.52 KB
Description	HiPerFETTM Power MOSFETs
Datasheet	IXFR21N100Q_IXYSCorporation.pdf

IXFR21N100Q Product details

Features

Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation.
IXYS advanced low Qg process.
Low gate charge and capacitances - easier to drive - faster switching.
Low drain to tab capacitance(.

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Published: Jul 25, 2008 |