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IXFP16N50P - Polar MOSFET

Features

  • z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 400 m Ω Advantages z z z Easy to mount Space savings High power density DS99357A(03/05) © 2005 IXYS All rights reserved IXFH 16N50P IXFA 16N50P IXFP 16N50P Symbol Test Conditions www. DataSheet4U. com Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 8 16 2250 VGS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 RDS(on) trr = 500 V = 16 A = 400 mΩ = 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 500 500 ±30 ± 40 16 35 16 25 750 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C TO-220 (IXTP) G D S (TAB) TO-263 (IXTA) G S (TAB) TO-247 (IXFH) 1.6 mm (0.062 in.
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