IXFN34N80 Datasheet - IXYS Corporation

IXFN34N80 Power MOSFET

HiPerFETTM Power MOSFETs Single DieMOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet IXFN 34N80 D VDSS = 800 V ID25 = 34 A RDS(on) = 0.24 W trr £ 250 ns S Symbol www.DataSheet4U.com Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 800 800 ±20 ±30 34 136 3.

IXFN34N80 Features

* International standard packages

* miniBLOC, with Aluminium nitride 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s 300 2500 3000 isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (U

IXFN34N80 Datasheet (163.67 KB)