IXFN34N100 Datasheet - IXYS Corporation

IXFN34N100 Power MOSFET

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 34N100 VDSS ID25 RDS(on) = 1000V = 34A = 0.28W D G S S Symbol www.DataSheet4U.com Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ£ 150°C, RG = 2 W TC= 25°C Maximum Ratings 1000 1000 ± 20 ± 30 34 136 34 .

IXFN34N100 Features

* International standard packages isolation miniBLOC, with Aluminium nitride Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Low package inductance Fast intrinsic Rectifier Applications DC-DC converters rated 50/60 Hz, RMS IISOL

IXFN34N100 Datasheet (133.13 KB)