IXFH40N50Q - Power MOSFET

IXYS Corporation

Datasheet Details

z z 1.13/10 Nm/lb. in. 6 4 g g IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 25 1 0.14 V V nA µA mA Ω z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V Rated for unclamped Inducti.

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Published: May 30, 2011 |