IXFH230N10T - Trench HiperFET Power MOSFET

IXYS Corporation

Datasheet Details

Part number	IXFH230N10T
Manufacturer	IXYS Corporation
File Size	181.15 KB
Description	Trench HiperFET Power MOSFET
Datasheet	IXFH230N10T_IXYSCorporation.pdf

z z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 Seconds 300 260 6 International Standard Package 175°C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages z z z Easy to Mount Space Savings High Power Density Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ±.

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Published: May 30, 2011 |