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IXFH20N50P3 - Power MOSFET

Download the IXFH20N50P3 datasheet PDF. This datasheet also covers the IXFA20N50P3 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Fast Intrinsic Rectifier.
  • Avalanche Rated.
  • Low RDS(ON) and QG.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFA20N50P3-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFH20N100P Polar Power MOSFET HiPerFET IXYS Corporation
IXFH20N60 (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching IXYS Corporation
IXFH20N60 Power MOSFET IXYS Corporation
IXFH20N60Q HiPerFET Power MOSFETs Q-Class IXYS Corporation
IXFH20N80P PolarHV HiPerFET Power MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFH20N85X Power MOSFET
IXFH21N50Q Power MOSFET
IXFH220N06T3 Power MOSFET
IXFH22N50P PolarHV HiPerFET Power MOSFET
IXFH22N55 HiPerFET Power MOSFET

Full PDF Text Transcription

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Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 TO-263 (IXFA) TO-220 (IXFP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight G S D (Tab) G D S D (Tab) Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V  30 V  40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 20 40 10 300 35 380 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W  C  C  C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220, TO-3P & TO-247) 1.
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