IXFH110N15T2 - TrenchT2 HiperFET Power MOSFET

IXYS Corporation

Datasheet Details

Part number	IXFH110N15T2
Manufacturer	IXYS Corporation
File Size	182.18 KB
Description	TrenchT2 HiperFET Power MOSFET
Datasheet	IXFH110N15T2_IXYSCorporation.pdf

z z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in. ) from case for 10s Plastic body for 10 seconds 300 260 6 International standard package 175°C Operating Temperature High current handling capability Fast intrinsic Rectifier Dynamic dV/dt rated Low RDS(on) Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA.

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Published: May 30, 2011 |