DSEP8-06B Datasheet (IXYS Corporation) - HiPerFRED Epitaxial Diode

DSEP8-06B, HiPerFRED Epitaxial Diode

www.DataSheet4U.com DSEP 8-06B HiPerFREDTM Epitaxial Diode with soft recovery Preliminary Data VRSM V 600 VRRM V Type A C IFAV = 10 A VRRM = 600 V trr = 30 ns TO-220 AC C 600 DSEP 8-06B A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 125°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH VA = 1.5 VR typ.; f = 10 kHz; repetitive Maximum Ratings

DSEP8-06B Features

* A q mJ A °C °C °C W Nm g q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 60 0.40.6 2 Applications q q q Symbol IR x Condit