DE475-501N44A - RF Power MOSFET

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IXYS Corporation

Part number	DE475-501N44A
Manufacturer	IXYS Corporation
File Size	82.45 KB
Description	RF Power MOSFET
Datasheet	DE475-501N44A Datasheet
Additional preview pages of the DE475-501N44A datasheet.

SG1 SG2 GATE = = = = 500 V 44 A 0.14 Ω 600W Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB TJ TJM Tstg TL Weight Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C PDHS DRAIN SD1 SD2 1.6mm (0.063 in) from case for 10 s 300 3.
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Published: Sep 28, 2005 |