DE475-102N21A - RF Power MOSFET

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IXYS Corporation

Part number	DE475-102N21A
Manufacturer	IXYS Corporation
File Size	173.64 KB
Description	RF Power MOSFET
Datasheet	DE475-102N21A Datasheet
Additional preview pages of the DE475-102N21A datasheet.

TJ = 25°C unless otherwise specified min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight 1.6mm (0.063 in) from case for 10 s VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 15 V, ID = 0.5ID25, pulse test typ. max. V 5.5 ±100 50 1 0.41 V nA µA mA Ω S +175 °C °C +175 °C °C g.
Isolated Substrate.
high isolation voltage (>2500V).

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Published: Sep 28, 2005 |