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IS65WV51216EALL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS65WV51216EALL datasheet PDF. This datasheet also covers the IS62WV51216EALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

words by 16 bits.

performance CMOS technology.

Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 12 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V.
  • 2.2V VDD (62/65WV51216EALL).
  • 2.2V--3.6V VDD (62/65WV51216EBLL).
  • Data control for upper and lower bytes.
  • Automotive temperature (-40oC to +125oC) BLOCK.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV51216EALL-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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IS62/65WV51216EALL IS62/65WV51216EBLL 512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM NOVEMBER 2014 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating – 12 µW (typical) CMOS standby  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive temperature (-40oC to +125oC) BLOCK DIAGRAM DESCRIPTION The IS62WV51216EALL/ IS62WV51216EBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using 's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
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