IS65WV51216EBLL Datasheet PDF - ISSI ULTRA LOW POWER CMOS STATIC RAM Specs

IS65WV51216EBLL - ULTRA LOW POWER CMOS STATIC RAM

This page provides the datasheet information for the IS65WV51216EBLL, a member of the IS62WV51216EALL ULTRA LOW POWER CMOS STATIC RAM family.

Datasheet Summary

Description

words by 16 bits.

performance CMOS technology.

Features

High-speed access time: 45ns, 55ns.
CMOS low power operation.
36 mW (typical) operating.
12 µW (typical) CMOS standby.
TTL compatible interface levels.
Single power supply.
1.65V.
2.2V VDD (62/65WV51216EALL).
2.2V--3.6V VDD (62/65WV51216EBLL).
Data control for upper and lower bytes.
Automotive temperature (-40oC to +125oC) BLOCK.

Datasheet Details

Part number	IS65WV51216EBLL
Manufacturer	ISSI
File Size	1.22 MB
Description	ULTRA LOW POWER CMOS STATIC RAM
Datasheet	IS65WV51216EBLL Datasheet
Additional preview pages of the IS65WV51216EBLL datasheet.

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Full PDF Text Transcription

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IS62/65WV51216EALL IS62/65WV51216EBLL 512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM NOVEMBER 2014 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating – 12 µW (typical) CMOS standby  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive temperature (-40oC to +125oC) BLOCK DIAGRAM DESCRIPTION The IS62WV51216EALL/ IS62WV51216EBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using 's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Published: Jun 9, 2016 |