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IS65WV12816DALL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS65WV12816DALL datasheet PDF. This datasheet also covers the IS62WV12816DALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

bits.

CMOS technology.

Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.8V ± 10% Vdd (IS62/65WV12816DALL).
  • 2.5V--3.6V Vdd (IS62/65WV12816DBLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial and Autotmo.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV12816DALL-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL 128K x 16 LOW VOLTAGE, JUNE 2013 ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.8V ± 10% Vdd (IS62/65WV12816DALL) – 2.5V--3.6V Vdd (IS62/65WV12816DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Autotmovie temperature support • 2CS Option Available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV12816DALL/DBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits.
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