IS46TR16512A - 512M x 16 8Gb DDR3 SDRAM

Datasheet Details

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V -Backward compatible to 1.5V.
High speed data transfer rates with system frequency up to 933 MHz.
8 internal banks for concurrent operation.
8n-Bit pre-fetch architecture.
Programmable CAS Latency.
Programmable Additive Latency: 0, CL-1,CL-2.
Programmable CAS WRITE latency (CWL) based on tCK.
Programmable Burst Length: 4 and 8.
Programmable Burs.

📁 IS46TR16512A Similar Datasheet

IS46R16160F - 256Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16320D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16320E - 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16800E - 128Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32160D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32160E - 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32400E - 128Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32800F - 256Mb DDR SDRAM (Integrated Silicon Solution)

Other Datasheets by ISSI

Published: Oct 8, 2018 |