IS46LR16400C, IS43LR16400C - 1M x 16Bits x 4Banks Mobile DDR SDRAM

ISSI

Datasheet Details

Part number	IS46LR16400C, IS43LR16400C
Manufacturer	ISSI
File Size	1.15 MB
Description	1M x 16Bits x 4Banks Mobile DDR SDRAM
Datasheet	IS43LR16400C-ISSI.pdf
Note	This datasheet PDF includes multiple part numbers: IS46LR16400C, IS43LR16400C. Please refer to the document for exact specifications by model.

The IS43/46LR16400C is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 16 bits.

JEDEC standard 1.8V power supply.
VDD = 1.8V, VDDQ = 1.8V.
Four internal banks for concurrent operation.
MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave).
Fully differential clock inputs (CK, /CK).
All inputs except data & DM are sampled at the rising edge of the system clock.
Data I/O transaction on both edges of data strobe.
Bidirectional d.

📁 IS46LR16400C Similar Datasheet

IS46R16160F - 256Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16320D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16320E - 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16800E - 128Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32160D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32160E - 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32400E - 128Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32800F - 256Mb DDR SDRAM (Integrated Silicon Solution)

Other Datasheets by ISSI

Published: Jun 28, 2016 |