IS46LR16160G - 4M x 16Bits x 4Banks Mobile DDR SDRAM

Datasheet Details

Part number	IS46LR16160G
Manufacturer	ISSI
File Size	1.19 MB
Description	4M x 16Bits x 4Banks Mobile DDR SDRAM
Datasheet	IS46LR16160G-ISSI.pdf

The IS43/46LR16160G is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits.

JEDEC standard 1.8V power supply.
VDD = 1.8V, VDDQ = 1.8V.
Four internal banks for concurrent operation.
MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave).
Fully differential clock inputs (CK, /CK).
All inputs except data & DM are sampled at the rising edge of the system clock.
Data I/O transaction on both edges of data strobe.
Bidirectional da.

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Published: Jun 28, 2016 |