IS42S83200C - 256Mb Single Data Rate Synchronous DRAM

Name: IS42S83200C
SKU: IS42S83200C-1340370

ISSI

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Datasheet Details

Part number	IS42S83200C
Manufacturer	ISSI
File Size	1.47 MB
Description	256Mb Single Data Rate Synchronous DRAM
Datasheet	IS42S83200C-ISSI.pdf

IS42S83200C Product details

Description

IS42S83200C is organized as 4-bank x 8,388,608-word x 8-bit Synchronous DRAM with LVTTL interface and IS42S16160C is organized as 4-bank x 4,194,304-word x 16-bit.

Features

- Single 3.3V ±0.3V power supply - Max. Clock frequency : - 6:166MHz/-7:143MHz/-75:133MHz - Fully synchronous operation referenced to clock rising edge - 4-bank operation controlled by BA0,BA1(Bank Address) - /CAS latency- 2/3 (programmable) - Burst length- 1/2/4/8/FP (programmable) - Burst type- Sequential and interleave burst (programmable) - Byte Control- LDQM and UDQM (IS42S16160C) - Random column access - Auto precharge / All bank precharge controlled by A10 - Auto and.

📁 IS42S83200C Similar Datasheet

IS42S83200B - 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)
IS42S83200D - 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)
IS42S81600A - 128-MBIT SYNCHRONOUS DRAM (Integrated Circuit Solution)
IS42S86400B - 32M x 16 512Mb SYNCHRONOUS DRAM (Integrated Silicon Solution)
IS42S16100 - 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM (Integrated Silicon Solution)
IS42S16100E - 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM (Integrated Silicon Solution)
IS42S16128 - 128K words x 16 Bits x 2 Banks SDRAM (Integrated Silicon)
IS42S16160 - 16Meg x16 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)

Other Datasheets by ISSI

IS42S83200G - 256Mb SYNCHRONOUS DRAM
IS42S83200J - 256Mb SYNCHRONOUS DRAM
IS42S83200L - 256Mb SYNCHRONOUS DRAM
IS42S81600B - 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S81600D - 128-MBIT SYNCHRONOUS DRAM
IS42S81600F - 128Mb SYNCHRONOUS DRAM

Published: Mar 8, 2019 |