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IS42S32200 - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Description

A0-A10 Address Input BA0, BA1 Bank Select Address I/O0 to I/O31 Data I/O CLK System Clock Input CKE CS Clock Enable Chip Select RAS Row Address Strobe Command CAS WE Column A

Features

  • Clock frequency: 166, 143 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single 3.3V power supply.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Self refresh modes.
  • 4096 refresh cycles every 64 ms.
  • Random column address every clock cycle.
  • Prog.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42S32200E SYNCHRONOUS DYNAMIC RAM
IS42S32200L 64-MBIT SYNCHRONOUS DYNAMIC RAM
IS42S32200N 64-MBIT SYNCHRONOUS DYNAMIC RAM
IS42S32160D 512Mb SDRAM
IS42S32160F 512Mb SDRAM

Full PDF Text Transcription

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IS42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM ISSI® PRELIMINARY INFORMATION August 2003 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 3.
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