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IS35MW04G168 - 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY

Download the IS35MW04G168 datasheet PDF. This datasheet also covers the IS34MW04G088 variant, as both devices belong to the same 4gb slc-8b ecc 1.8v x8/x16 nand flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.

The Erase operation is implemented in a single block unit (256Kbytes + 16Kbytes).

Features

  • Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8, 256Mb x16 - Page Size for x8: (4K + 256) Bytes - Page Size for x16: (2K + 128) words - Block Size for x8: 64x (4K + 256) Bytes - Block Size for x16: 64x (2K + 128) words - Number of Plane = 1 - Number of Block per Die (LUN) = 2048.
  • ONFI 1.0 compliant.
  • Highest performance - Read Performance: - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance: - Pr.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS34MW04G088-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS35MW04G164 4Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS35MW04G084 4Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS35MW04G088 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY
IS35MW01G084 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
IS35MW01G164 1Gb (x8/x16) 1.8V NAND FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS34MW04G088/168 IS35MW04G088/168 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35MW04G088/168 4Gb (x8/x16) 1.8V NAND FLASH MEMORY with 8b ECC FEATURES • Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8, 256Mb x16 - Page Size for x8: (4K + 256) Bytes - Page Size for x16: (2K + 128) words - Block Size for x8: 64x (4K + 256) Bytes - Block Size for x16: 64x (2K + 128) words - Number of Plane = 1 - Number of Block per Die (LUN) = 2048 • ONFI 1.0 compliant • Highest performance - Read Performance: - Random Read: 25us (Max.) - Serial Access: 25ns (Max.) - Write Performance: - Program time: 300us (typ.), 700us (max.) - Block Erase time: 3.5ms (typ.), 10ms (max.) • Voltage and Temp. Ranges - Single 1.8V (1.7V to 1.
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